Jan Fransens,. Fabian Di Fiore, Frank Van Reeth. The Reconstruction of Missing Frames in Historical Films, a Layered Approach // Graphicon 2005 proceedings, http://www.graphicon.ru/proceedings2005/

PbTe thin films were prepared by vacuum technique with different thicknesses ranged from 550 to 3000 Angstrem. The electrical resistivity as a function of the film thickness and mobility was measured. The dependence of log (resistivity) and log (current) were studied as a function of the universal of temperature. The activation energies were estimated before and after the break. The transition of conductivity from n-type to p-type is attributed to the tincrease of migrating lead vacancies. An increase of the applied voltages on the thin films caused the shift of breaking temperature to higher temperatures. This is attributed to creation of Pb vacancies which retard the break.

In this contribution we present the structural and photoluminescence (PL) analysis of Er doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 mum that has been studied on the series of specially prepared samples with the different crystallinity, i. e. percentage and sizes of Si nanocrystals. In has been observed the strong, by about two orders of magnitude, increase of Er-related PL intensity in these samples with the lowering of Si nanocrystal sizes from 7.9 to about 1.5 nm. The results are discussed in terms of the sensitization effect of Si nanocrystals on Er ions. This work was partially supported by FCT foundation (Portugal) and Russian foundation for basic research (RFBR project N 01-02-16439).

We describe the preparation of layers of amorphous Se, AsxS1-x, AsxSe1-x, GexS1-x and GexSe1-x by plasma-enhanced chemical vapour deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy.

In this work we investigated the stability of a-Si : H films under illumination and following recovery in dark at different temperatures. The a-Si : H films were fabricated with 55 kHz PECVD and with standard rf 13.56 MHz PECVD. We measured the steady-state photocurrent and the dark current after switchhing off the light source as a function of time. We observed photocurrent degradation and following recovery of the dark current. The kinetics of the photocurrent degradation as well as the dark current recovery demonstrated stretched-exponential behavior. The results of these straightforward measurements in combination with computer modeling were used to determine the effect of light-induced degradation and thermal recovery on the density of states distribution in the band gap ofa-Si : H. We have found that the photocurrent degradation and the corresponding increase in the total defect concentration have different kinetics. The different kinetics were determined also for the dark current recovery and the corresponding decrease in the total defect concentration. The results point out that slow and fast types of defects in a-Si : H films control the kinetics of light-induced changes of the defect distribution in the band gap. A model is proposed that relates the origin of the fast and slow metastable defects with the distribution of Si-Si bond lengths.

The diffusion of chromium bottom contact has been studied through thin10 nm amorphous silicon film. The concentration of the diffused impurity has been analysed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at400oC and annealing time varied from 0-300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film limited by silicide formation at the metal-silicon interface.

Hot wire CVD thin silicon films were studied by means of dark conductivity, FTIR, hydrogen evolution and SEM surface characterization. Three types of metastability were observed: a) long term irreversible degradation due to oxidization processes on the film surface, b) reversible degradation determined by uncontrolled water/oxygen adsorption, c) fast field switching effect in the film bulk. We propose this effect is associated with morphology changes during film growth and electrical field induced by adsorbed atmospheric components on the film surface. It has been found that metastable processes close to the film surface are stronger than in the bulk.

In the present research, spray pyrolysis technique is employed to synthesize 10%Gd-doped ceria (GDC) thin films on ceramic substrates with an intention to use the "film/substrate" structure in solid oxide fuel cells. GDC films deposited on GDC substrate showed enhanced crystallite formation. In case of NiO–GDC composite substrate, the thickness of film was higher (~ 13 μm) as compared to the film thickness on GDC substrate (~ 2 μm). The relative density of the films deposited on both the substrates was of the order of 95%. The impedance measurements revealed that ionic conductivity of GDC/NiO–GDC structure was of the order of 0.10 S/cm at 500 °C, which is a desirable property for its prospective application.

In work results of the researches executed, at the Kharkov national university of radio electronics, connected with working out and application statistical regreshional models with reference to silicon single-crystal PVC with structure n +-p-p +, and also to amorphous PVC.

According to results of researches by mathematical simulation was first installed opposite effect of the density of irrigation on the coefficients of heat and mass transfer, which causes extreme nature of relationship between the amount absorbed from the refrigerant flow of weak solution.